dc.creator | Gorchichko, Mariia | |
dc.date.accessioned | 2020-08-23T15:44:57Z | |
dc.date.available | 2019-11-18 | |
dc.date.issued | 2019-11-18 | |
dc.identifier.uri | https://etd.library.vanderbilt.edu/etd-11142019-111120 | |
dc.identifier.uri | http://hdl.handle.net/1803/14529 | |
dc.description.abstract | Due to the advances in manufacturing and enhanced gate control of the transistor channel, FinFETs are commonly used in highly-scaled ICs. The geometry of the devices is one of the key factors impacting radiation responses of FinFETs. This thesis presents results of total-ionizing-dose irradiation and low-frequency noise of 30-nm gate-length bulk and SOI FinFETs for devices with fin widths of 10 nm to 40 nm. Minimal threshold voltage shifts are observed at 2 Mrad(SiO<sub>2</sub>), but large increases in low-frequency noise are found, and significant changes in defect-energy distributions are inferred. Radiation-induced leakage current is enhanced for narrow- and short-channel bulk FinFETs. Short-channel SOI FinFETs show enhanced degradation compared with longer-channel devices. Narrow- and short-channel SOI devices exhibit high radiation tolerance. Significant random telegraph noise is observed in smaller devices due to prominent individual defects. | |
dc.format.mimetype | application/pdf | |
dc.subject | FinFET | |
dc.subject | silicon-on-insulator (SOI) | |
dc.subject | total ionizing dose (TID) | |
dc.subject | low-frequency noise | |
dc.subject | random telegraph noise (RTN) | |
dc.title | Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO<sub>2</sub>/HfO<sub>2</sub> Gate Dielectrics | |
dc.type | thesis | |
dc.contributor.committeeMember | Daniel M. Fleetwood | |
dc.contributor.committeeMember | Ronald D. Schrimpf | |
dc.type.material | text | |
thesis.degree.name | MS | |
thesis.degree.level | thesis | |
thesis.degree.discipline | Electrical Engineering | |
thesis.degree.grantor | Vanderbilt University | |
local.embargo.terms | 2019-11-18 | |
local.embargo.lift | 2019-11-18 | |