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    Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO<sub>2</sub>/HfO<sub>2</sub> Gate Dielectrics

    Gorchichko, Mariia
    : https://etd.library.vanderbilt.edu/etd-11142019-111120
    http://hdl.handle.net/1803/14529
    : 2019-11-18

    Abstract

    Due to the advances in manufacturing and enhanced gate control of the transistor channel, FinFETs are commonly used in highly-scaled ICs. The geometry of the devices is one of the key factors impacting radiation responses of FinFETs. This thesis presents results of total-ionizing-dose irradiation and low-frequency noise of 30-nm gate-length bulk and SOI FinFETs for devices with fin widths of 10 nm to 40 nm. Minimal threshold voltage shifts are observed at 2 Mrad(SiO<sub>2</sub>), but large increases in low-frequency noise are found, and significant changes in defect-energy distributions are inferred. Radiation-induced leakage current is enhanced for narrow- and short-channel bulk FinFETs. Short-channel SOI FinFETs show enhanced degradation compared with longer-channel devices. Narrow- and short-channel SOI devices exhibit high radiation tolerance. Significant random telegraph noise is observed in smaller devices due to prominent individual defects.
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