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Single Event Mechanisms in 90 nm Triple-well CMOS Devices

dc.creatorRoy, Tania
dc.description.abstractTriple-well NMOSFETs collect more charge as compared to dual-well NMOSFETs. Single event charge collection mechanisms in 90 nm triple-well NMOS devices are explained and compared with those of dual-well devices. The primary factors affecting the single event pulse width in triple-well NMOSFETs are the separation of deposited charge due to the n-well, potential rise in the p-well followed by the injection of electrons into the p-well by the source, and removal of holes by the p-well contact. Design parameters of p-wells, such as contact area, doping depth and placement, are varied to reduce single event pulse widths. Pulse width decreases as the area of the p-well contacts increases, the p-well contacts becomes deeper, and the p-well contacts are placed more frequently. Increasing the p-well – n-well junction depth also causes the full width half rail (FWHR) pulse width to decrease. In long p-wells with multiple transistors present in them, a potential gradient occurs along the body of the well as regions of the well away from the strike remain unaffected.
dc.subjecttriple well
dc.subjectsingle event
dc.subjectsemiconductor physics
dc.titleSingle Event Mechanisms in 90 nm Triple-well CMOS Devices
dc.type.materialtext Engineering University
dc.contributor.committeeChairArthur F. Witulski
dc.contributor.committeeChairRonald D. Schrimpf

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