dc.creator | Duan, Guoxing | |
dc.date.accessioned | 2020-08-22T20:30:45Z | |
dc.date.available | 2018-08-15 | |
dc.date.issued | 2016-08-15 | |
dc.identifier.uri | https://etd.library.vanderbilt.edu/etd-07212016-224032 | |
dc.identifier.uri | http://hdl.handle.net/1803/13406 | |
dc.description.abstract | The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases has been evaluated. Negative bias irradiation leads to the worst-case degradation. We attribute this result to an increase in density of additional radiation-induced holes that become trapped in the HfO2 under negative bias, and additional electron trapping under positive bias in the HfO2, as compared with the 0 V irradiation case. When devices are exposed to negative bias-temperature stress, we find similar values of Ea for oxide-trap charge buildup, and a reduced Ea for interface-trap buildup, for Si0.55Ge0.45 pMOSFETs with high-k gate stacks, compared to control Si devices with SiO2 gate dielectrics. The low-frequency 1/f noise of these devices was also investigated. The magnitude of noise is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~ 250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise is attributed to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 (especially at the higher measuring temperatures) and/or hydrogen-dopant interactions in the SiGe layer of the device (especially for lower measuring temperature). | |
dc.format.mimetype | application/pdf | |
dc.subject | HfO2 | |
dc.subject | SiGe | |
dc.subject | low frequency noise | |
dc.subject | NBTI | |
dc.subject | TID | |
dc.title | Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices | |
dc.type | dissertation | |
dc.contributor.committeeMember | Ronald D. Schrimpf | |
dc.contributor.committeeMember | Robert A. Reed | |
dc.contributor.committeeMember | Sokrates T. Pantelides | |
dc.contributor.committeeMember | Enxia Zhang | |
dc.type.material | text | |
thesis.degree.name | PHD | |
thesis.degree.level | dissertation | |
thesis.degree.discipline | Electrical Engineering | |
thesis.degree.grantor | Vanderbilt University | |
local.embargo.terms | 2018-08-15 | |
local.embargo.lift | 2018-08-15 | |
dc.contributor.committeeChair | Daniel M. Fleetwood | |