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Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices

dc.creatorDuan, Guoxing
dc.date.accessioned2020-08-22T20:30:45Z
dc.date.available2018-08-15
dc.date.issued2016-08-15
dc.identifier.urihttps://etd.library.vanderbilt.edu/etd-07212016-224032
dc.identifier.urihttp://hdl.handle.net/1803/13406
dc.description.abstractThe total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases has been evaluated. Negative bias irradiation leads to the worst-case degradation. We attribute this result to an increase in density of additional radiation-induced holes that become trapped in the HfO2 under negative bias, and additional electron trapping under positive bias in the HfO2, as compared with the 0 V irradiation case. When devices are exposed to negative bias-temperature stress, we find similar values of Ea for oxide-trap charge buildup, and a reduced Ea for interface-trap buildup, for Si0.55Ge0.45 pMOSFETs with high-k gate stacks, compared to control Si devices with SiO2 gate dielectrics. The low-frequency 1/f noise of these devices was also investigated. The magnitude of noise is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~ 250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise is attributed to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 (especially at the higher measuring temperatures) and/or hydrogen-dopant interactions in the SiGe layer of the device (especially for lower measuring temperature).
dc.format.mimetypeapplication/pdf
dc.subjectHfO2
dc.subjectSiGe
dc.subjectlow frequency noise
dc.subjectNBTI
dc.subjectTID
dc.titleRadiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices
dc.typedissertation
dc.contributor.committeeMemberRonald D. Schrimpf
dc.contributor.committeeMemberRobert A. Reed
dc.contributor.committeeMemberSokrates T. Pantelides
dc.contributor.committeeMemberEnxia Zhang
dc.type.materialtext
thesis.degree.namePHD
thesis.degree.leveldissertation
thesis.degree.disciplineElectrical Engineering
thesis.degree.grantorVanderbilt University
local.embargo.terms2018-08-15
local.embargo.lift2018-08-15
dc.contributor.committeeChairDaniel M. Fleetwood


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