• About
    • Login
    View Item 
    •   Institutional Repository Home
    • Electronic Theses and Dissertations
    • Electronic Theses and Dissertations
    • View Item
    •   Institutional Repository Home
    • Electronic Theses and Dissertations
    • Electronic Theses and Dissertations
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of Institutional RepositoryCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsDepartmentThis CollectionBy Issue DateAuthorsTitlesSubjectsDepartment

    My Account

    LoginRegister

    Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices

    Duan, Guoxing
    : https://etd.library.vanderbilt.edu/etd-07212016-224032
    http://hdl.handle.net/1803/13406
    : 2016-08-15

    Abstract

    The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases has been evaluated. Negative bias irradiation leads to the worst-case degradation. We attribute this result to an increase in density of additional radiation-induced holes that become trapped in the HfO2 under negative bias, and additional electron trapping under positive bias in the HfO2, as compared with the 0 V irradiation case. When devices are exposed to negative bias-temperature stress, we find similar values of Ea for oxide-trap charge buildup, and a reduced Ea for interface-trap buildup, for Si0.55Ge0.45 pMOSFETs with high-k gate stacks, compared to control Si devices with SiO2 gate dielectrics. The low-frequency 1/f noise of these devices was also investigated. The magnitude of noise is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~ 250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise is attributed to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 (especially at the higher measuring temperatures) and/or hydrogen-dopant interactions in the SiGe layer of the device (especially for lower measuring temperature).
    Show full item record

    Files in this item

    Icon
    Name:
    Duan.pdf
    Size:
    2.631Mb
    Format:
    PDF
    View/Open

    This item appears in the following collection(s):

    • Electronic Theses and Dissertations

    Connect with Vanderbilt Libraries

    Your Vanderbilt

    • Alumni
    • Current Students
    • Faculty & Staff
    • International Students
    • Media
    • Parents & Family
    • Prospective Students
    • Researchers
    • Sports Fans
    • Visitors & Neighbors

    Support the Jean and Alexander Heard Libraries

    Support the Library...Give Now

    Gifts to the Libraries support the learning and research needs of the entire Vanderbilt community. Learn more about giving to the Libraries.

    Become a Friend of the Libraries

    Quick Links

    • Hours
    • About
    • Employment
    • Staff Directory
    • Accessibility Services
    • Contact
    • Vanderbilt Home
    • Privacy Policy