dc.creator | Ramachandran, Vishwanath | |
dc.date.accessioned | 2020-08-23T16:22:48Z | |
dc.date.available | 2007-12-21 | |
dc.date.issued | 2006-12-21 | |
dc.identifier.uri | https://etd.library.vanderbilt.edu/etd-12192006-190448 | |
dc.identifier.uri | http://hdl.handle.net/1803/15313 | |
dc.description.abstract | Total ionizing dose effects in a low-dropout
voltage regulator are explained based on experimental data and circuit simulations. Transistor gain degradation is shown to be the dominant cause of the circuit degradation at lower dose rates. In addition, collector-to-emitter
leakage current in one of the NPN transistors of
the bandgap reference part of the circuit is responsible for increasing the postirradiation output voltage at high dose rates. Parametric changes in the bandgap, differential amplifier, and output pass transistor circuit blocks are
identified that are responsible for various aspects of the observed circuit degradation. The different annealing characteristics of oxide-trap and interface-trap charge are responsible for the complex postirradiation recovery of the
output voltage. | |
dc.format.mimetype | application/pdf | |
dc.subject | voltage regulator | |
dc.subject | enhanced low-dose-rate sensitivity | |
dc.subject | radiation-induced leakage | |
dc.subject | IC radiation response | |
dc.subject | linear bipolar ICs | |
dc.subject | modeling and simulation | |
dc.subject | Integrated circuits--Effect of radiation on | |
dc.title | Analysis of Total-Dose Effects for a Low-Dropout Voltage Regulator | |
dc.type | thesis | |
dc.contributor.committeeMember | Daniel M. Fleetwood | |
dc.contributor.committeeMember | Ronald D. Schrimpf | |
dc.type.material | text | |
thesis.degree.name | MS | |
thesis.degree.level | thesis | |
thesis.degree.discipline | Electrical Engineering | |
thesis.degree.grantor | Vanderbilt University | |
local.embargo.terms | 2007-12-21 | |
local.embargo.lift | 2007-12-21 | |