dc.creator | Park, Heungman | |
dc.date.accessioned | 2020-08-22T17:03:42Z | |
dc.date.available | 2012-06-08 | |
dc.date.issued | 2010-06-08 | |
dc.identifier.uri | https://etd.library.vanderbilt.edu/etd-06072010-161006 | |
dc.identifier.uri | http://hdl.handle.net/1803/12494 | |
dc.description.abstract | Second harmonic generation (SHG) has been utilized as a sensitive and non-invasive optical tool to investigate the interface in Si/SiO2 systems. This dissertation encompasses two major topics: 1) Polarization-dependent SHG in Si/SiO2 systems and 2) characterization of boron-induced interface charge traps in Si/SiO2 systems. Polarization-dependent temporal behavior is investigated in these systems by a time-dependent SHG (TD-SHG) approach. A critical polarization angle is defined in which no temporal SHG response is shown in P-polarized SHG signals. The critical angle is observed to be independent of wafer dopant type, doping concentration, oxide type and oxide thickness. During the growth of the oxide in boron-doped silicon, boron atoms migrate into the oxide creating charge traps near the interface. The charge traps induce a built-in DC electric field across the interface. The properties of the boron-induced charge traps are characterized by TD-SHG measurements including the determination of an energy threshold for filling the boron charge traps. | |
dc.format.mimetype | application/pdf | |
dc.subject | silicon | |
dc.subject | si | |
dc.subject | sio2 | |
dc.subject | second harmonic generation | |
dc.title | Second harmonic generation in Si/SiO2 systems. | |
dc.type | dissertation | |
dc.type.material | text | |
thesis.degree.name | PHD | |
thesis.degree.level | dissertation | |
thesis.degree.discipline | Physics | |
thesis.degree.grantor | Vanderbilt University | |
local.embargo.terms | 2012-06-08 | |
local.embargo.lift | 2012-06-08 | |
dc.contributor.committeeChair | Norman H. Tolk | |