Radiation-induced charge trapping studies of advanced Si and SiC based MOS devices

Abstract

This dissertation presents the radiation-induced charge trapping studies of upcoming material systems of Si and SiC for future low power and high power technologies. HfO2/Si with metal gates has already been announced as the material system that will power the future technology scaling for low power devices. SiO2/SiC based devices are possible candidates for the upcoming high power device technologies. This dissertation provides significant insights into the charge trapping characteristics in these devices exposed to high-energy ionizing radiation. Charge trapping is studied as a function of dose, processing and gate oxide fields with extensive materials characterization performed before irradiations. The results provide additional information for establishing reliable design rules for future MOS devices intended for both, high and low operating voltage when exposed to a radiation environment.