dc.creator | Atkinson, Nicholas Montgomery | |
dc.date.accessioned | 2020-08-22T00:13:10Z | |
dc.date.available | 2010-04-12 | |
dc.date.issued | 2010-04-12 | |
dc.identifier.uri | https://etd.library.vanderbilt.edu/etd-03292010-113506 | |
dc.identifier.uri | http://hdl.handle.net/1803/11694 | |
dc.description.abstract | A single event occurs when an ionizing particle strikes a microelectronic circuit and deposits charge in the semiconductor material. Charge deposited by the particle is often collected by the circuit, resulting in a current transient that can lead to soft errors, depending on the circuit response. In this thesis, single-event (SE) mechanisms in combinational logic are discussed in the context of a 90-nm digital cell library in bulk CMOS. Technology Computer Aided Design (TCAD) simulations are used to investigate various parameters across different cell designs. Knowledge of the effects of layout- and circuit-level parameters on SE response is used to perform a TCAD characterization of a 90-nm digital cell library. The results give insight into the relative SE vulnerability of different types of logic cells. | |
dc.format.mimetype | application/pdf | |
dc.subject | cell library | |
dc.subject | single event | |
dc.title | Single-Event Characterization of a 90-nm Bulk CMOS Digital Cell Library | |
dc.type | thesis | |
dc.contributor.committeeMember | Prof. Arthur F. Witulski | |
dc.type.material | text | |
thesis.degree.name | MS | |
thesis.degree.level | thesis | |
thesis.degree.discipline | Electrical Engineering | |
thesis.degree.grantor | Vanderbilt University | |
local.embargo.terms | 2010-04-12 | |
local.embargo.lift | 2010-04-12 | |
dc.contributor.committeeChair | Prof. W. Timothy Holman | |