dc.creator | Dhar, Sarit | |
dc.date.accessioned | 2020-08-21T21:02:58Z | |
dc.date.available | 2006-02-22 | |
dc.date.issued | 2005-02-22 | |
dc.identifier.uri | https://etd.library.vanderbilt.edu/etd-02222005-122500 | |
dc.identifier.uri | http://hdl.handle.net/1803/10605 | |
dc.description.abstract | Silicon Carbide (SiC) is a wide band-gap semiconductor that is receiving much attention for electronic applications in high temperature and high power environments. Operation under these extreme conditions has motivated the development of SiC metal-oxide-field-effect-transistors (MOSFETs) for efficient power switching applications. In any MOS system, the quality of the interface between the oxide and the semiconductor has a great impact on the performance of the device. Although SiC can be thermally oxidized to silicon dioxide (SiO2) as in the case of Si; one of the major obstacles for SiC MOSFET development has been the inferior quality of the SiO2/SiC interface. This dissertation focuses on the development and characterization of interface modification processes that passivate interface defects and improve the quality of this interface. | |
dc.format.mimetype | application/pdf | |
dc.subject | interface states | |
dc.subject | interface passivation | |
dc.subject | channel mobility | |
dc.subject | metal-oxide-semiconductor field effect transistor | |
dc.subject | crystal face | |
dc.subject | oxidation | |
dc.subject | nitridation | |
dc.subject | silicon dioxide | |
dc.subject | silicon carbide | |
dc.title | Nitrogen and hydrogen induced trap passivation at the SiO2/4H-SiC interface | |
dc.type | dissertation | |
dc.contributor.committeeMember | Daniel M. Fleetwood | |
dc.contributor.committeeMember | Bridget R. ROgers | |
dc.contributor.committeeMember | John R. Williams | |
dc.contributor.committeeMember | Sokrates T. Pantelides | |
dc.type.material | text | |
thesis.degree.name | PHD | |
thesis.degree.level | dissertation | |
thesis.degree.discipline | Materials Science and Engineering | |
thesis.degree.grantor | Vanderbilt University | |
local.embargo.terms | 2006-02-22 | |
local.embargo.lift | 2006-02-22 | |
dc.contributor.committeeChair | Leonard C. Feldman | |