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    Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors

    Ramachandran, Vishwanath
    : https://etd.library.vanderbilt.edu/etd-02012013-134911
    http://hdl.handle.net/1803/10512
    : 2013-02-01

    Abstract

    Single-event mechanisms in InAlSb/InAs/AlGaSb high electron mobility transistors (HEMTs) are identified and investigated. Single-event transients are characterized using broadbeam and microbeam experiments along with 2-D technology computer-aided design (TCAD) modeling. The experiments show that single-event transients can be generated not only in the channel region but also across the drain-source alloy and buffer interface. The prevalence of strong single-event transient sensitivity to gate bias is demonstrated through broadbeam experiments, where the integrated charge peaks at threshold bias and drops off at both depletion and accumulation biases. A type-II band alignment in the InAlSb/InAs/AlGaSb HEMT modulating charge transport and electric field in the channel is shown to be responsible for the observed single-event transient sensitivity to gate bias. The effects of processing-induced device threshold voltage variations on the corresponding single-event response are studied through 2-D TCAD modeling.
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