Single-Event Characterization of Flip-Flops after Total Ionizing Dose Exposures for a 20-nm Bulk, Planar Technology

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dc.contributor.committeeMemberBharat Bhuva
dc.contributor.committeeMemberEnxia Zhang
dc.creatorMoktader, Arif
dc.date.accessioned2020-08-23T15:47:16Z
dc.date.available2018-11-30
dc.date.issued2016-11-30
dc.description.abstractThis paper looks at single-event upset characterization of flip flops across total ionizing dose (TID) exposures and annealing current for a 20-nm bulk, planar, CMOS technology. 20-nm chips were irradiated to five different TID levels using an x-ray radiation source, and alpha particle tests were conducted using a Polonium-210 source during and after an annealing period. Impacts on single event upsets and ring oscillator frequency are studied.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttps://etd.library.vanderbilt.edu/etd-11182016-085816
dc.identifier.urihttp://hdl.handle.net/1803/14607
dc.subjectspace
dc.subjectFF
dc.subjectTID
dc.subjectupset
dc.subjectradiation
dc.titleSingle-Event Characterization of Flip-Flops after Total Ionizing Dose Exposures for a 20-nm Bulk, Planar Technology
dc.typethesis
dc.type.materialtext
local.embargo.lift2018-11-30
local.embargo.terms2018-11-30
thesis.degree.disciplineElectrical Engineering
thesis.degree.grantorVanderbilt University
thesis.degree.levelthesis
thesis.degree.nameMS

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