Single-Event Characterization of Flip-Flops after Total Ionizing Dose Exposures for a 20-nm Bulk, Planar Technology

Abstract

This paper looks at single-event upset characterization of flip flops across total ionizing dose (TID) exposures and annealing current for a 20-nm bulk, planar, CMOS technology. 20-nm chips were irradiated to five different TID levels using an x-ray radiation source, and alpha particle tests were conducted using a Polonium-210 source during and after an annealing period. Impacts on single event upsets and ring oscillator frequency are studied.