Browsing Electronic Theses and Dissertations by Subject "1/f noise"
Now showing items 1-7 of 7
-
(2011-11-28)Department: Electrical EngineeringDefects that lie at or near the semiconductor-oxide interface of MOS transistors were characterized using 1/f noise and charge pumping measurements. The frequency, gate-voltage, and temperature dependence of the noise were ...
-
(2018-01-15)Department: Electrical EngineeringDuring the last three decades, GaN-based HEMTs are increasingly developed for their excellent application for high power, high frequency and radiation-tolerance. The improvements in GaN-based HEMTs fabrication result in a ...
-
(2008-12-15)Department: Electrical EngineeringWe have studied the effects of moisture exposure and total dose irradiation on MOS low frequency noise. We compare the effects of moisture on the 1/f noise of nMOS and pMOS devices and how the noise changes for each with ...
-
(2004-11-19)Department: Electrical EngineeringWe have studied 1/f noise and total-dose response associated with Al2O3/SiOxNy/Si(100) gate dielectrics. Both the radiation-induced threshold-voltage shifts and the low-frequency noise are significantly larger than are ...
-
(2013-07-05)Department: Electrical EngineeringGallium Nitride (GaN)-based devices are used in space-based high power, high frequency applications due to high breakdown voltage and high carrier mobility and the large bandgap of GaN. The radiation effects and hot carrier ...
-
(2013-04-22)Department: Electrical EngineeringBias-temperature-instabilities (BTIs) and total ionizing dose effects are investigated for 4H-SiC MOS devices. Low frequency noise measurements are employed to help understand the nature of the defects that affect the ...
-
(2011-10-12)Department: Electrical EngineeringThe reliability of GaN/AlGaN HEMTs, fabricated using MOCVD, and MBE under Ga-rich, N-rich and ammonia-rich conditions, is studied using high field stress experiments and low frequency 1/f noise measurements. Hot electron ...