Now showing items 1-2 of 2

    • Danciu, Ioana (2011-10-17)
      Department: Electrical Engineering
      The 1/f noise magnitude of n-channel metal-oxide-semiconductor field effect transistors is found to decrease by up a factor of ~3 after 18 years of room-temperature aging. This decrease is largest in devices with ...
    • Francis, Sarah Ashley (2011-11-28)
      Department: Electrical Engineering
      Defects that lie at or near the semiconductor-oxide interface of MOS transistors were characterized using 1/f noise and charge pumping measurements. The frequency, gate-voltage, and temperature dependence of the noise were ...