dc.creator | Milanowski, Randall James | |
dc.date.accessioned | 2020-08-23T16:24:53Z | |
dc.date.available | 2003-10-21 | |
dc.date.issued | 2003-01-17 | |
dc.identifier.uri | https://etd.library.vanderbilt.edu/etd-122299-104613 | |
dc.identifier.uri | http://hdl.handle.net/1803/15341 | |
dc.description.abstract | Ionizing radiation poses a serious threat to semiconductor integrated circuits that are required to
operate reliably in radiation-intensive environments, for example, circuits used in space electronics.
Numerical modeling of radiation-induced defect formation in the Si-SiO2 system is finding
increasing application in the design of radiation-resistant electronics. To date, several numerical
hole-trapping simulators have been developed and applied to radiation-induced leakage problems.
However, few attempts have been made to model the kinetics of interface trap formation. This dissertation
presents a novel solution to this problem, specifically, a coupled model for electron, hole,
and proton transport in Silicon Dioxide suitable for transient device simulation-based prediction
of the buildup of both major types radiation-induced defects: trapped oxide charge and interface
traps. This model provides two fundamental “firsts” in physically-based radiation effects simulation:
(1) the representation of hole-trapping-induced proton release in a self-consistent system of
electron, hole, and proton continuity equations, and (2) the application of a continuity equation-based
model for dispersive proton transport. Essential features of hydrogen-mediated interface trap
formation are demonstrated in a series of pulsed exposure/switched bias simulations. | |
dc.format.mimetype | application/pdf | |
dc.subject | interface trap | |
dc.subject | radiation effects | |
dc.subject | tcad | |
dc.subject | dispersive transport | |
dc.subject | hydrogen | |
dc.subject | ctrw | |
dc.title | Transient Simulation of Radiation-Induced Charge Trapping
and Interface Trap Formation Using a Physically-Based,
Three-Carrier Transport Model in Silicon Dioxide | |
dc.type | PHD | |
dc.contributor.committeeMember | Ken Galloway | |
dc.contributor.committeeMember | Ron Schrimpf | |
dc.contributor.committeeMember | Sokrates Pantelides | |
dc.contributor.committeeMember | Bob Weller | |
dc.type.material | text | |
thesis.degree.name | PHD | |
thesis.degree.level | PHD | |
thesis.degree.discipline | Electrical Engineering | |
thesis.degree.grantor | Vanderbilt University | |
local.embargo.terms | 2003-10-21 | |
local.embargo.lift | 2003-10-21 | |
dc.contributor.committeeChair | Lloyd Massengill | |