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Comparison of combinational and sequential error rates and a low overhead technique for single event transient mitigation

dc.creatorMahatme, Nihaar Nilesh
dc.date.accessioned2020-08-23T16:14:55Z
dc.date.available2011-12-06
dc.date.issued2011-12-06
dc.identifier.urihttps://etd.library.vanderbilt.edu/etd-12062011-113559
dc.identifier.urihttp://hdl.handle.net/1803/15175
dc.description.abstractSingle Event Effects (SEE) in combinational logic circuits, caused due radiation particle strikes are a major concern for modern high-speed devices. The frequency dependence of SEE in state-of-the-art 40 nm circuits is evaluated and the contribution of logic errors to the chip-level Soft Error Rate (SER) is quantified experimentally. A model is developed to help predict the frequency threshold at which logic errors could dominate the chip-level SER. Results suggest that, due to higher transistor density and higher operating frequencies, logic soft errors could exceed the flip-flop error rate for future technologies. A low overhead probabilistic technique to harden logic circuits against radiation induced errors is also developed.
dc.format.mimetypeapplication/pdf
dc.subjectcombinational logic circuits
dc.subjecthigh speed circuits
dc.subjectradiation effects
dc.subjectsingle event effects
dc.subjectsoft errors
dc.titleComparison of combinational and sequential error rates and a low overhead technique for single event transient mitigation
dc.typethesis
dc.contributor.committeeMemberLloyd Massengill
dc.type.materialtext
thesis.degree.nameMS
thesis.degree.levelthesis
thesis.degree.disciplineElectrical Engineering
thesis.degree.grantorVanderbilt University
local.embargo.terms2011-12-06
local.embargo.lift2011-12-06
dc.contributor.committeeChairBharat Bhuva


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