| dc.creator | Moktader, Arif | |
| dc.date.accessioned | 2020-08-23T15:47:16Z | |
| dc.date.available | 2018-11-30 | |
| dc.date.issued | 2016-11-30 | |
| dc.identifier.uri | https://etd.library.vanderbilt.edu/etd-11182016-085816 | |
| dc.identifier.uri | http://hdl.handle.net/1803/14607 | |
| dc.description.abstract | This paper looks at single-event upset characterization of flip flops across total ionizing dose (TID) exposures and annealing current for a 20-nm bulk, planar, CMOS technology. 20-nm chips were irradiated to five different TID levels using an x-ray radiation source, and alpha particle tests were conducted using a Polonium-210 source during and after an annealing period. Impacts on single event upsets and ring oscillator frequency are studied. | |
| dc.format.mimetype | application/pdf | |
| dc.subject | space | |
| dc.subject | FF | |
| dc.subject | TID | |
| dc.subject | upset | |
| dc.subject | radiation | |
| dc.title | Single-Event Characterization of Flip-Flops after Total Ionizing Dose Exposures for a 20-nm Bulk, Planar Technology | |
| dc.type | thesis | |
| dc.contributor.committeeMember | Bharat Bhuva | |
| dc.contributor.committeeMember | Enxia Zhang | |
| dc.type.material | text | |
| thesis.degree.name | MS | |
| thesis.degree.level | thesis | |
| thesis.degree.discipline | Electrical Engineering | |
| thesis.degree.grantor | Vanderbilt University | |
| local.embargo.terms | 2018-11-30 | |
| local.embargo.lift | 2018-11-30 | |
