dc.creator | Zhao, Simeng | |
dc.date.accessioned | 2020-08-22T20:55:30Z | |
dc.date.available | 2017-09-14 | |
dc.date.issued | 2017-09-14 | |
dc.identifier.uri | https://etd.library.vanderbilt.edu/etd-09012017-135035 | |
dc.identifier.uri | http://hdl.handle.net/1803/14063 | |
dc.description.abstract | This thesis focuses on radiation effects of multi-fin MOS capacitors with high-K dielectrics built in Ge and InGaAs FinFET technologies. Capacitance-frequency (C-f) measurements are applied to provide lower-bound estimates of border-trap densities in these devices before and after X-ray irradiation. The method is illustrated for SiO2-based planar MOS capacitors, and compared with high-frequency capacitance-voltage (C-V) measurements. Lower border-trap densities are found before and after irradiation for multi-fin capacitors built in a strained Ge pMOS FinFET technology than for similar devices built using an early-developmental stage InGaAs MOS technology. These results show the utility of C-f measurements in characterizing defect densities in MOS capacitors, particularly when large border-trap densities exist. | |
dc.format.mimetype | application/pdf | |
dc.subject | capacitance-voltage | |
dc.subject | capacitance-frequency | |
dc.subject | FinFETs | |
dc.subject | interface traps | |
dc.subject | MOS | |
dc.subject | Border traps | |
dc.subject | radiation effects | |
dc.title | Capacitance-frequency Estimates of Border-trap Densities in Multi-fin MOS Capacitors | |
dc.type | thesis | |
dc.type.material | text | |
thesis.degree.name | MS | |
thesis.degree.level | thesis | |
thesis.degree.discipline | Electrical Engineering | |
thesis.degree.grantor | Vanderbilt University | |
local.embargo.terms | 2017-09-14 | |
local.embargo.lift | 2017-09-14 | |
dc.contributor.committeeChair | En Xia Zhang | |
dc.contributor.committeeChair | Daniel Fleetwood | |