Fabrication and Characterization of Diamond Thin Films as Nanocarbon Transistor Substrates

Abstract

As the limits of silicon based transistors are approached, carbon nano-electronics represents a promising alternative to traditional semiconducting transistors. Silicon-dioxide hinders the electron transport through carbon transistors as well as obscuring information about their transport. Diamond is a promising new dielectric for use with carbon transistors which may remedy these problems. This project is concerned with the development of diamond thin films for use as dielectric substrates in FETs. Diamond films were grown, trying to minimize thickness and conductivity. Diamond was chosen as a material due to its wide band gap, as well as its radiation hardness. This would allow inspection of the effects of radiation on the transistor elements in our FETs. These films were characterized using a number of techniques to assess their viability as dielectric substrates. Once the viability was established, the surface was modified to create an optimal interface for the transistors that would be transferred to the surface. Finally, transfer of carbon based transistors was attempted.