Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process

Abstract

The impacts of total ionizing dose (TID), temperature and RF bias on the DC and RF performance of a commercial 32 nm RF SOI CMOS technology are presented. Temperature dependence is shown to be the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined effects of elevated temperature and TID showing the most pronounced degradation. The most significant effect due to TID is an increase in off-state leakage current. Key DC and RF parameters of this 32 nm RF process degrade less than those of an otherwise similar 45 nm RF SOI CMOS process. The implications of the combined TID and temperature response are discussed for low-power RF design.