Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets

Abstract

Stopping muons and electrons have been shown in previous work to be capable of inducing single event upsets (SEUs) in modern SRAM technologies. In order to determine when electron and muon SEU testing for a given device are required, methods developed in this work provide an alternative capable of assessing the vulnerability of devices to SEUs induced by these particles. Ion test data from more commonly available ion beams are used to parameterize a multiple sensitive volume model for use with a Monte Carlo transport tool. This approach is validated for a 28 nm SRAM by comparing simulation results to ion test data taken at various facilities. Models developed for this SRAM accurately reproduce its proton, muon, and electron experimental SEU cross-sections. Rate predictions for various relevant environments are also performed.