Browsing by Author "W. Timothy Holman, Ph.D."
Now showing items 1-2 of 2
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Nsengiyumva, Patrick (2018-04-02)Department: Electrical EngineeringWith technology scaling at 22 nm and beyond, the semiconductor industry has successfully transitioned to 3D multi-gate transistors (i.e., FinFETs) due to the excellent FinFET gate control and reduced short channel effects ...
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Kauppila, Jeffrey Scott (2015-03-25)Department: Electrical EngineeringThe development of integrated circuits intended for use in transient radiation environments must account for the impact of the environment on the operation of the circuit. The design of integrated circuits is increasingly ...