Browsing by Author "W. Tim Holman"
Now showing items 1-2 of 2
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Danciu, Ioana (2011-10-17)Department: Electrical EngineeringThe 1/f noise magnitude of n-channel metal-oxide-semiconductor field effect transistors is found to decrease by up a factor of ~3 after 18 years of room-temperature aging. This decrease is largest in devices with ...
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Francis, Sarah Ashley (2011-11-28)Department: Electrical EngineeringDefects that lie at or near the semiconductor-oxide interface of MOS transistors were characterized using 1/f noise and charge pumping measurements. The frequency, gate-voltage, and temperature dependence of the noise were ...