Browsing by Title
Now showing items 1-20 of 17906
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(Vanderbilt University. School of Engineering, 2009-01-27)
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(Vanderbilt University. School of Engineering, 2009-01-27)
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(Vanderbilt University. School of Engineering, 2009-01-27)
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03/08/08 (Vanderbilt University, 2008-09-21)
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(Vanderbilt University. School of Engineering, 2009-01-27)
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(Vanderbilt University. School of Engineering, 2009-01-27)
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(Vanderbilt University. School of Engineering, 2009-01-27)
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(Vanderbilt University. School of Engineering, 2009-01-27)
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(Vanderbilt University. School of Engineering, 2009-01-27)
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08/09/08 (Vanderbilt University, 2008-09-21)
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(Vanderbilt University. School of Engineering, 2009-01-27)
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(2017-11-07)Department: Electrical EngineeringThree commercially available GaN-based HEMT RF power devices were irradiated with 1.8 MeV protons in three operational modes. The operational modes were semi-on, fully-on and RF-on. The former two modes were low and ...
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(2011-10-17)Department: Electrical EngineeringThe 1/f noise magnitude of n-channel metal-oxide-semiconductor field effect transistors is found to decrease by up a factor of ~3 after 18 years of room-temperature aging. This decrease is largest in devices with ...
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(Vanderbilt University. School of Engineering, 2009-01-27)
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10/08/08 (Vanderbilt University, 2008-09-21)
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(Vanderbilt University, 2009-11-26)
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(Vanderbilt University, 2009-11-08)
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(Vanderbilt University, 2009-11-02)
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(Vanderbilt University, 2009-09-20)
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(Vanderbilt University, 2009-10-05)