Browsing by Subject "FinFETs"
Now showing items 1-6 of 6
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(2021-05-14)Department: Electrical EngineeringIn this work, single-event upset responses of D flip-flop designs with different threshold-voltage options in a 7-nm bulk FinFET technology are examined. Experimental data imply that single-event cross-section depends ...
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(2017-09-14)Department: Electrical EngineeringThis thesis focuses on radiation effects of multi-fin MOS capacitors with high-K dielectrics built in Ge and InGaAs FinFET technologies. Capacitance-frequency (C-f) measurements are applied to provide lower-bound estimates ...
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(2021-06-07)Department: Electrical EngineeringSince the dawn of the Space Age, spaced-based systems have played an increasingly prominent role in everyday life. In order to ensure that materials and systems used in the harsh radiation environment of space operate ...
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(2009-04-21)Department: Electrical EngineeringIn this thesis, we examine the total dose response of planar fully depleted planar SOI MOSFETs fabricated in a FinFET technology as functions of both drain bias and gate length. The ID for negative Vgf increases with the ...
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(2021-12-15)Department: Electrical EngineeringTwo broad categories of radiation effects; total ionizing dose (TID) and single event effects (SEE) in Ge channel devices have been investigated. In addition to that, negative bias temperature instabilities (NBTI) in Ge ...
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(2017-08-29)Department: Electrical EngineeringThe icy bodies of the solar system, such as Europa and Titan, are high priority targets for exploratory spacecraft missions by NASA and the world’s space agencies. Such missions would likely involve electronic payloads ...