Browsing by Subject "1/f noise"

Now showing items 1-7 of 7

    • Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices 
      Francis, Sarah Ashley (2011-11-28)
      Department: Electrical Engineering
      Defects that lie at or near the semiconductor-oxide interface of MOS transistors were characterized using 1/f noise and charge pumping measurements. The frequency, gate-voltage, and temperature dependence of the noise were ...
    • Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs 
      Jiang, Rong (2018-01-15)
      Department: Electrical Engineering
      During the last three decades, GaN-based HEMTs are increasingly developed for their excellent application for high power, high frequency and radiation-tolerance. The improvements in GaN-based HEMTs fabrication result in a ...
    • Effects of Moisture Exposure and Total Dose Irradiation on MOS Low Frequency Noise 
      Francis, Sarah Ashley (2008-12-15)
      Department: Electrical Engineering
      We have studied the effects of moisture exposure and total dose irradiation on MOS low frequency noise. We compare the effects of moisture on the 1/f noise of nMOS and pMOS devices and how the noise changes for each with ...
    • Low frequency noise and charge trapping in MOSFETs 
      Xiong, Hao D. (2004-11-19)
      Department: Electrical Engineering
      We have studied 1/f noise and total-dose response associated with Al2O3/SiOxNy/Si(100) gate dielectrics. Both the radiation-induced threshold-voltage shifts and the low-frequency noise are significantly larger than are ...
    • Radiation response and reliability of AlGaN/GaN HEMTS 
      Chen, Jin (2013-07-05)
      Department: Electrical Engineering
      Gallium Nitride (GaN)-based devices are used in space-based high power, high frequency applications due to high breakdown voltage and high carrier mobility and the large bandgap of GaN. The radiation effects and hot carrier ...
    • Reliability and irradiation effects of 4H-SiC MOS devices 
      Zhang, Xuan (Cher) (2013-04-22)
      Department: Electrical Engineering
      Bias-temperature-instabilities (BTIs) and total ionizing dose effects are investigated for 4H-SiC MOS devices. Low frequency noise measurements are employed to help understand the nature of the defects that affect the ...
    • Reliability-limiting defects in GaN/AlGaN high electron mobility transistors 
      Roy, Tania (2011-10-12)
      Department: Electrical Engineering
      The reliability of GaN/AlGaN HEMTs, fabricated using MOCVD, and MBE under Ga-rich, N-rich and ammonia-rich conditions, is studied using high field stress experiments and low frequency 1/f noise measurements. Hot electron ...