Now showing items 1-2 of 2

    • Cao, Jingchen; 0000-0002-9250-8594 (2020-09-14)
      Department: Electrical Engineering
      With scaling of CMOS technology, single event effect (SEE) has become more and more significant due to the increasing packing density and the reducing supply voltage and node capacitance. Therefore, radiation hardened by ...
    • Cao, Jingchen; 0000-0002-9250-8594 (2022-05-16)
      Department: Electrical Engineering
      Total ionizing dose (TID) effects are important to consider for nonvolatile memories used in high-radiation environments. Nowadays NAND Flash memory devices are based primarily on 3D NAND architecture due to their advantages ...