Transient Simulation of Radiation-Induced Charge Trapping and Interface Trap Formation Using a Physically-Based, Three-Carrier Transport Model in Silicon Dioxide

Abstract

Ionizing radiation poses a serious threat to semiconductor integrated circuits that are required to operate reliably in radiation-intensive environments, for example, circuits used in space electronics. Numerical modeling of radiation-induced defect formation in the Si-SiO2 system is finding increasing application in the design of radiation-resistant electronics. To date, several numerical hole-trapping simulators have been developed and applied to radiation-induced leakage problems. However, few attempts have been made to model the kinetics of interface trap formation. This dissertation presents a novel solution to this problem, specifically, a coupled model for electron, hole, and proton transport in Silicon Dioxide suitable for transient device simulation-based prediction of the buildup of both major types radiation-induced defects: trapped oxide charge and interface traps. This model provides two fundamental “firsts” in physically-based radiation effects simulation: (1) the representation of hole-trapping-induced proton release in a self-consistent system of electron, hole, and proton continuity equations, and (2) the application of a continuity equation-based model for dispersive proton transport. Essential features of hydrogen-mediated interface trap formation are demonstrated in a series of pulsed exposure/switched bias simulations.