Analysis of Schottky diode failure mechanisms during exposure to electron beam pulse using TCAD simlulation

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dc.contributor.committeeChairDr. Ronald Schrimpf
dc.contributor.committeeMemberDr. Greg Walker
dc.creatorRalston-Good, Jeremy
dc.date.accessioned2020-08-22T00:04:47Z
dc.date.available2003-10-21
dc.date.issued2003-04-18
dc.description.abstractNumerical process and device simulation tools are used in this work to analyze the physical mechanisms that contribute to catastrophic failure of power Schottky diodes exposed to an electron beam pulse. Simulations suggest that the diodes fail at the guard ring edge due to depletion region collapse that effectively shorts the guard ring to the substrate, leading to high current densities and thermal runaway. Numerical simulations are also used to examine techniques to increase survivability.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttps://etd.library.vanderbilt.edu/etd-03272003-122718
dc.identifier.urihttp://hdl.handle.net/1803/11479
dc.subjectSchottky Diodes
dc.titleAnalysis of Schottky diode failure mechanisms during exposure to electron beam pulse using TCAD simlulation
dc.typethesis
dc.type.materialtext
local.embargo.lift2003-10-21
local.embargo.terms2003-10-21
thesis.degree.disciplineElectrical Engineering
thesis.degree.grantorVanderbilt University
thesis.degree.levelthesis
thesis.degree.nameME

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