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High temperature oxidation of silica formers in dissociated oxygen

dc.creatorVora, Nirav Dineshkumar
dc.description.abstractA study of the high temperature oxidation of silica formers in dissociated oxygen is presented in this dissertation. Flowing an O2/Ar gas mixture through a microwave discharge before it entered a flow reactor generated the partially dissociated oxygen environment. The samples were oxidized at high temperatures (1183 K – 1323 K) and low pressures (3 Torr – 4 Torr). The O atom concentration near the sample surface, determined using a semi-empirical reactor model, was used to define the quantitative role of O atoms in the oxidation mechanism. The continuous, non-isothermal, compressible, laminar flow, coupled with high-temperature oxygen plasma afterglow chemistry model was solved using the finite element method. Modeling of the silicon, Si3N4, and SiC oxidation mechanisms showed that the O atom is the dominant oxidizing species, with O2 having a negligible effect.
dc.subjectoxygen plasma afterglow
dc.subjecthigh temperature
dc.subjectoxidation of silicon
dc.subjectfinite element model
dc.subjectparallel oxidation model
dc.subjectreactive compressible flow
dc.subjectSilicon compounds -- Oxidation
dc.subjectHeat resistant materials
dc.subjectSpace vehicles -- Materials
dc.titleHigh temperature oxidation of silica formers in dissociated oxygen
dc.contributor.committeeMemberDr. Ken A. Debelak
dc.contributor.committeeMemberDr. Kane Jennings
dc.contributor.committeeMemberDr. M. Douglas LeVan
dc.contributor.committeeMemberDr. D. Greg Walker
dc.type.materialtext Engineering University
dc.contributor.committeeChairDr. Bridget R. Rogers

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